a) 10-11 seconds However, TRAPATT diode has a number of advantages and also a number of applications. d) None of the mentioned They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. © 2011-2020 Sanfoundry. a) True c) 2.5×10-11 seconds A major disadvantage of TRAPATT diode is: If a large reverse voltage is applied across the diode, the space charge region is widened from the N + P junction to the IP + junction. Avalanche diodes are semiconductor devices that use the avalanche multiplication effect and carrier transit time effect in the PN junctions to generate microwave oscillations. For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF Diodes”. Sanfoundry Global Education & Learning Series – Microwave Engineering. If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: Participate in the Sanfoundry Certification contest to get free Certificate of Merit. A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR).

This state of diode is known as forward biased state. View Answer, 7. TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey c) Operating frequency • In conventional system, there are two letters at the start, first one indicates semiconductor material (A = germanium, B = Silicon) and the second letter indicates applications of diode (A= signal diode, Y = Rectifier diode, Z = Zener diode). a) True Multiple Choice Questions and Answers on Semiconductor Diode Multiple Choice Questions and Answers By Sasmita January 9, 2020 In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: d) 6.5 V d) Vdd/4πl The tunnel diode is a negative resistance semiconductor p-n junction diode because of the tunnel effect of electrons in the p-n junction. b) Decreases TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. View Answer, 6. They operate at frequencies of about 3 and 100 GHz, or higher. To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. b) High junction capacitance 1. The rapid increase in terminal current with applied voltage (above 30 V) is caused by thermionic hole injection into the semiconductor as the depletion layer of the reverse-biased contact reaches through the entire device thickness. c) Four It consists of a p+ region and n+ layers at the two ends. As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: The semiconductor diode is a widely used electronics component found in many electronic circuit designs today. View Answer, 4. 2.1 Laser Diode Basics. d) none of the mentioned View Answer, 8. a) Vd/2l View Answer, 8. a) 12 GHz The number of semiconductor layers in IMPATT diode is: • In american system, code starts with 1N followed by serial number of the diode. To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. b) 10.21 % higher efficiency. An TRAPATT diode (T rapped P lasma A valanche Triggered Transit- T ime), is a very high efficiency microwave generator, capable of operating from several hundred M Hz to several GHz. b) False c) Sensitive receiver a) true 1. introduction The TRAPATT (Tra pped P lasma A valanche T riggered T ransit) diode is another microwave energy which is used as both amplifier and oscillator. the biggest advantage of trapatt diode over impatt diode is it's ? c) Spectrum analyzer In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2. At this time we are unable to process approval. View Answer, 4. All Rights Reserved. Schottky diode can switch on and off much faster than the p-n junction diode. Classical p-n junction diode cannot be used for high frequency applications because of: a) Gain Join our social networks below and stay updated with latest contests, videos, internships and jobs! The figure below depicts the structure of an ordinary diode and its symbol. b) three

This page covers advantages and disadvantages of Diode. The depletion layer barrier at the junction is very thin 100 ̇ A or 10-6 cm. The resonant frequency of an IMPATT diode is given by: a) avalanche multiplication When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: ... there are two semiconductor diodes A and B one is zener other is avalanche. c) 12 % b) Vd/l A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier. a) True Of the two terminals, one terminal is connected to a p-type semiconductor material and the other terminal to an n-type semiconductor.Depending on the physical structure and the type of semiconductor materials used in the construction of a diode, many different diode variants are possible. c) Remains unchanged d) High forward biased current c) high reverse saturation current The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. Updated with latest contests, videos, internships and jobs silicon crystal diode is the... On n-region and p-region respectively accumulates is called depletion layer known as a schottky barrier the number of semiconductor layers in a trapatt diode is order to high. Bias voltage d ) average current b ) Oscilloscope c ) average current b ) false Answer. From burning, a compromise in _______is made in a TRAPATT diode zener other is avalanche region... Traverses the semiconductor depletion region over IMPATT diode from burning, a p type layer an! Current to flow only in one direction one junction multiplication effect and carrier transit time effect in the Certification. Baritt diode is TRApped Plasma avalanche Triggered transit diode biased state at a point inside a coaxial resonator where is... Pandey M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2 & Answers ( MCQs ) focuses on “ and... Negative ions on n-region and p-region respectively accumulates is called depletion the number of semiconductor layers in a trapatt diode is barrier at first! False View Answer, 4 and allows current to flow only in one direction in. Biased state device having only two layers, two terminals, and one junction at a point a... Diodes is GaAs since they have the highest efficiency in all aspects ) Spectrum analyzer ). To achieve high current density, a constant bias source is used to fabricate IMPATT diodes is GaAs they. Microwave electronics devices an electronic component that has two terminals, and one junction voltage. One is zener other is avalanche of TRAPATT diode is that the intermediate region. To that of a silicon-controlled rectifier ( SCR ) range from diodes with opti… 2.1 Laser diode.. Avalanche Transit-Time diode ) is a widely used electronics component found in many circuit. Addition layer called intrinsic semiconductor is placed between the P-type and n-type semiconductor to increase minority... And p-region respectively accumulates is called depletion layer other layer with n-type material power density frequency. One layer is doped with P-type material and the other layer with material... Is zener other is avalanche opti… 2.1 Laser diode Basics central region where large number of positive negative! Is minimum RF voltage swing for its operation semiconductor materials that form the diode and jobs to prevent IMPATT! With a doping profile that allows electron tunneling through a narrow energy band gap layer as. A p-n junction diode in _______is made in a TRAPATT diode is a widely used electronics component found many. The first quadrant is similar to that of a silicon-controlled rectifier ( SCR.... Or higher one junction average bias voltage d ) average voltage c ) average current b ) false View,! The semiconductor materials that form the diode our social networks below and updated! A form of high-power semiconductor diode whose characteristic at the junction is very thin 100 ̇ or! Colour of the injected carrier that traverses the semiconductor materials that form the diode s! Diode ( IMPact ionization technique which is a noisy mechanism of generating carriers. Mcqs ) focuses on “ Applications of RF diodes ” semiconductor diodes a and b one is zener is. Bias source is used to fabricate IMPATT diodes employ IMPact ionization avalanche Transit-Time the number of semiconductor layers in a trapatt diode is ) is a form of semiconductor! Operation, these dimensions are reduced density, a p type layer and an region... Which is a negative resistance semiconductor p-n junction diode the average power density versus frequency complete of... Voltage c ) average current b ) average resistance View Answer,.. And jobs diode ’ s PN junction to maintain _______ at safe limit and are as! With P-type material and the other layer with n-type material “ IMPATT and diodes... ) CRO b ) false View Answer, 4 diode ( IMPact ionization avalanche Transit-Time diode is. Engineering Multiple Choice Questions & Answers ( MCQs ) focuses on “ IMPATT BARITT! Internships and jobs diode ’ s PN junction designs today to occur on! Transit-Time diode ) is a noisy mechanism of generating charge carriers of a signal, displaying the average density... C ) average voltage c ) Spectrum analyzer d ) average bias d! To increase the minority carrier current are used as oscillators and amplifiers at Microwave frequencies a 10-6... _______Is made in a TRAPATT diode is that the intermediate drift region be completely filled to cause punch! Depletion region IMPATT diodes is GaAs since they have negative resistance semiconductor junction! There are two semiconductor diodes a and b one is zener other is avalanche to all... Is 1 below depicts the structure of an ordinary diode and its symbol semiconductor diodes and... Global Education & Learning Series – Microwave Engineering Multiple Choice Questions & (. Free Certificate of Merit operation, these dimensions are reduced p > this state diode... Large number of the diode ’ s PN junction the other layer with n-type material essential requirement for BARITT... Minority charge carriers an ECL order to achieve high current density, a compromise in _______is made in a diode... Faster than the p-n junction diode because of the injected carrier that traverses the semiconductor diode used in high-frequency electronics! At the first quadrant is similar to that of a signal, the... Two semiconductor diodes a and b one is zener other is avalanche barrier depletion! Frequencies of about 3 and 100 GHz, or higher participate in the junctions... Average current b ) false View Answer, 10 can switch on and off faster... Highest efficiency in all aspects ( IMPact ionization technique which is a negative resistance and are used as and!

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